Photonic switching by tunnelling-assisted absorption modulation in a GaAs sawtooth structure

Author

Schubert, E. Fred ; Cunningham, John E.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ

Volume

24

Issue

15

fYear

1988

fDate

7/21/1988 12:00:00 AM

Firstpage

980

Lastpage

982

Abstract

The authors report on an electrically controlled optical modulator using a novel GaAs sawtooth structure. This structure consists of alternating n-type and p-type delta-doped GaAs. Modulation of tunnelling-assisted absorption is achieved by changing the internal electric field which in turn is controlled by external bias. Modulation of light intensity is demonstrated over a broad spectral range of Δλ>100 nm. A contrast ratio of 1:1.7 of the opaque and transparent states is obtained. Low-voltage operation (ΔV<5 V) and potential high-speed capability make the new device an attractive candidate for future photoionic switching systems

Keywords

optical communication equipment; optical modulation; optoelectronic devices; switching; tunnelling; GaAs sawtooth structure; delta-doped GaAs; electrically controlled optical modulator; external bias; high-speed capability; internal electric field; n-type; optical communication equipment; p-type; photoionic switching systems; semiconductor superlattice; tunnelling-assisted absorption modulation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

191677