Title :
High K BaTiO/sub 3/ films from metalloorganic precursors
Author :
Xu, J.J. ; Shaikh, A.S. ; Vest, R.W.
Author_Institution :
Turner Lab., Purdue Univ., West Lafayette, IN, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
Crack-free and dense BaTiO/sub 3/ films 4 to 8 mu m thick were prepared by spinning a solution of metalloorganic precursors onto an appropriate substrate, and firing and annealing the film in air at certain temperatures to obtain appropriate grain sizes. The electrical properties of the films were studied as a function of grain size, temperature, frequency, and DC bias. Films with a grain size of 0.2 mu m showed ferroelectric properties similar to bulk BaTiO/sub 3/.<>
Keywords :
annealing; barium compounds; coating techniques; ferroelectric thin films; grain size; 4 to 8 micron; BaTiO/sub 3/ films; DC bias; annealing; ferroelectric properties; firing; frequency; grain sizes; metalloorganic precursors; temperature; Barium; Dielectric constant; Ferroelectric films; Ferroelectric materials; Grain size; High K dielectric materials; High-K gate dielectrics; Sputtering; Substrates; Temperature;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
