Title :
Low-threshold patterned quantum well lasers grown by molecular beam epitaxy
Author :
Kapon, E. ; Yun, C.P. ; Harbison, J.P. ; Florez, L.T. ; Stoffel, N.G.
Author_Institution :
Bell Commun Res, Red. Bank, NJ, USA
fDate :
8/4/1988 12:00:00 AM
Abstract :
GaAs/AlGaAs patterned quantum well lasers were grown by molecular beam epitaxy on grooved substrates. The carrier confinement and the real-index waveguiding in these lasers rely on lateral thickness variations in the quantum well active layer. Very low threshold currents, as low as 1.8 mA for uncoated devices at room temperature, with 63% differential efficiency have been obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.8 mA; 63 percent; GaAs-AlGaAs; MBE; carrier confinement; differential efficiency; grooved substrates; lateral thickness variations; low threshold currents; molecular beam epitaxy; patterned quantum well lasers; real-index waveguiding; semiconductors; uncoated devices;
Journal_Title :
Electronics Letters
