Title :
High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications
Author :
Huang, Shih-Yung ; Horng, Ray-Hua ; Shi, Jin-Wei ; Kuo, Hao-Chung ; Wuu, Dong-Sing
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
High-performance InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) with a plating Cu substrate for plastic optical fiber communication applications are reported. Good stability of emission wavelength was obtained at 0.016 nm/mA . The RCLEDs presents low temperature dependence, showing only a 3% drop in light output power as the temperature increasing from 25 to 85degC. The superior performance can be attributed to the decreased dynamic series resistance and the enhanced thermal dissipation of the heat sink substrate.
Keywords :
III-V semiconductors; copper; gallium compounds; heat sinks; indium compounds; light emitting diodes; optical fibre communication; wide band gap semiconductors; Cu; InGaN; RCLED; dynamic series resistance; emission wavelength; heat sink substrate; high-performance green resonant-cavity light-emitting diodes; plastic optical fiber communication applications; temperature 25 C to 85 C; thermal dissipation; InGaN; optical fiber; resonant-cavity light-emitting diode (RCLED);
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2009.2022283
