High-Performance InGaN-Based Green Resonant-Cavity Light-Emitting Diodes for Plastic Optical Fiber Applications

Author

Huang, Shih-Yung ; Horng, Ray-Hua ; Shi, Jin-Wei ; Kuo, Hao-Chung ; Wuu, Dong-Sing

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan

Volume

27

Issue

18

fYear

2009

Firstpage

4084

Lastpage

4094

Abstract

High-performance InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) with a plating Cu substrate for plastic optical fiber communication applications are reported. Good stability of emission wavelength was obtained at 0.016 nm/mA . The RCLEDs presents low temperature dependence, showing only a 3% drop in light output power as the temperature increasing from 25 to 85degC. The superior performance can be attributed to the decreased dynamic series resistance and the enhanced thermal dissipation of the heat sink substrate.

Keywords

III-V semiconductors; copper; gallium compounds; heat sinks; indium compounds; light emitting diodes; optical fibre communication; wide band gap semiconductors; Cu; InGaN; RCLED; dynamic series resistance; emission wavelength; heat sink substrate; high-performance green resonant-cavity light-emitting diodes; plastic optical fiber communication applications; temperature 25 C to 85 C; thermal dissipation; InGaN; optical fiber; resonant-cavity light-emitting diode (RCLED);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2009.2022283

Filename

4912306