Title :
High-temperature CW operation of planar buried-ridge structure lasers at λ=1.5 μm
Author :
Thulke, W. ; Zach, A.
Author_Institution :
Siemens AG Res. Labs., Muchen, West Germany
fDate :
8/4/1988 12:00:00 AM
Abstract :
GaInAsP/InP-PBRS lasers emitting at 1.5 μm have been fabricated by multiple liquid-phase epitaxy. Effective current confinement is achieved without current blocking layers. CW threshold current is as low as 9 mA at 25°C. Output powers per facet of up to 10 mW at 80°C and 3.5 mW at 100°C are obtained. The maximum operation temperature of 110°C is the highest value yet achieved with this type of laser at 1°5 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 10 mW; 110 C; 25 C; 9 mA; CW operation; CW threshold current; GaInAsP-InP; high temperature operation; planar buried-ridge structure lasers;
Journal_Title :
Electronics Letters
