Accurate two-dimensional approach for capacitance calculation in microcoplanar MES transmission lines

A new two-dimensional approach is proposed for the analysis of microcoplanar metal-semiconductor structures, where the depletion layer capacitance is calculated accurately after an exact determination of its boundary. The Green function, which is used to invert the Laplacian operator, is obtained by means of a conformal mapping technique to take into account the real position of the ground planes. The method constitutes a solid base for a further study of slow-wave MES coplanar waveguides and, with a small change in the boundary conditions, it can be extended to the analysis of MESFET propagating structures