High-speed electrooptic phase modulators using InGaAs/InAlAs multiple quantum well waveguides

Author

Wakita, Koichi ; Mitomi, Osamu ; Kotaka, Isamu ; Nojima, Shunji ; Kawamura, Yuichi

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

1

Issue

12

fYear

1989

Firstpage

441

Lastpage

442

Abstract

High-speed phase modulation of waveguided InGaAs/InAlAs multiple-quantum-well optical modulators operating at 1.55 mu m is described. The modulator requires a low voltage for pi -phase-shift (V/sub pi /=2.5 V) as well as a small intensity modulation depth of 1 dB. The measured electrical 3-dB bandwidth is 10 GHz, giving a bandwidth-to-voltage ratio of 4 GHz/V.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; high-speed optical techniques; indium compounds; integrated optics; optical modulation; optical waveguides; phase modulation; semiconductor quantum wells; 1.55 micron; 10 GHz; 2.5 V; III-V semiconductor; InGaAs-InAlAs; bandwidth-to-voltage ratio; electrical bandwidth; high-speed electrooptic phase modulators; low voltage; multiple quantum well waveguides; pi -phase-shift; small intensity modulation depth; Electric variables measurement; High speed optical techniques; Indium compounds; Indium gallium arsenide; Intensity modulation; Low voltage; Optical modulation; Optical waveguides; Phase modulation; Quantum well devices;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.46043

Filename

46043