Title :
High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes
Author :
Matsushima, Y. ; Akiba, S. ; Kushiro, Y.
Author_Institution :
KDD Meguro R&D Labs., Tokyo, Japan
fDate :
8/4/1988 12:00:00 AM
Abstract :
High-temperature, long-term life tests of GaInAs/InP heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted for the first time with an activation energy of 0.7 eV
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; life testing; optical communication equipment; reliability; semiconductor device testing; 0.7 eV; 1.55 micron; 10 C; GaInAs-InP; activation energy; criteria for high reliability photodetectors; failure rate; heterostructure avalanche photodiodes; high temperature tests; long-term life tests; optical submarine cable systems; planar type photodiodes;
Journal_Title :
Electronics Letters
