• DocumentCode
    841102
  • Title

    High reliability planar-type GaInAs/InP heterostructure avalanche photodiodes

  • Author

    Matsushima, Y. ; Akiba, S. ; Kushiro, Y.

  • Author_Institution
    KDD Meguro R&D Labs., Tokyo, Japan
  • Volume
    24
  • Issue
    16
  • fYear
    1988
  • fDate
    8/4/1988 12:00:00 AM
  • Firstpage
    1013
  • Lastpage
    1014
  • Abstract
    High-temperature, long-term life tests of GaInAs/InP heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55 μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted for the first time with an activation energy of 0.7 eV
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; life testing; optical communication equipment; reliability; semiconductor device testing; 0.7 eV; 1.55 micron; 10 C; GaInAs-InP; activation energy; criteria for high reliability photodetectors; failure rate; heterostructure avalanche photodiodes; high temperature tests; long-term life tests; optical submarine cable systems; planar type photodiodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191701
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841102