Title :
Bistable operation of 0.8 μm GaInAsP/GaAs lasers
Author :
Ishikawa, Jun ; Ito, Takao ; Takahashi, N.S. ; Kurita, Satoshi
Author_Institution :
Dept. of Sci & Technol., Keio Univ., Yokohama
fDate :
8/4/1988 12:00:00 AM
Abstract :
Quaternary GaInAsP prepared on GaAs is a very promising material for optoelectronic devices in alternating AlGaAs/GaAs systems. The authors report bistable operation in stripe geometry GaInAsP/GaAs DH lasers with gain region and absorbing region in the laser resonator. A hysteresis loop is observed in the I/L curve under pulsed operation at room temperature
Keywords :
III-V semiconductors; gallium arsenide; hysteresis; indium compounds; integrated optoelectronics; semiconductor junction lasers; semiconductor technology; 0.8 micron; GaInAsP-GaAs lasers; I/L curve; absorbing region; bistable operation; gain region; hysteresis loop; laser resonator; optoelectronic devices; pulsed operation; room temperature operation; semiconductors; stripe geometry GaInAsP/GaAs DH lasers;
Journal_Title :
Electronics Letters
