Title :
Fast Vth Instability in HfO2 Gate Dielectric MOSFETs and Its Impact on Digital Circuits
Author :
Shen, Chen ; Yang, Tian ; Li, Ming-Fu ; Wang, Xinpeng ; Foo, C.E. ; Samudra, Ganesh S. ; Yeo, Yee-Chia ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Singapore Nat. Univ.
fDate :
12/1/2006 12:00:00 AM
Abstract :
Fast component of Vth instability in MOSFET with HfO 2 gate dielectric is systematically measured and characterized. A charge-trapping/detrapping model is used to simulate the Vth instability with overall agreement with the experiments. Experimental and modeling data provide and predict the fast Vth shift under both static and dynamic stress conditions. These data are incorporated into HSpice circuit simulation to evaluate the impact of Vth shift on the performance of digital circuit in realistic situations. Considering the properties of the fast Vth instability, circuit performance can be optimized by circuit design in addition to process improvements. This should be included to the guideline of process development and circuit design for future CMOSFET digital systems
Keywords :
CMOS digital integrated circuits; SPICE; circuit stability; dielectric materials; hafnium compounds; integrated circuit modelling; CMOSFET digital systems; HSpice circuit simulation; HfO2 gate dielectric MOSFET; charge detrapping model; charge trapping model; digital circuits; dynamic stress conditions; static stress conditions; threshold voltage instability; Circuit optimization; Circuit simulation; Circuit synthesis; Design optimization; Dielectric measurements; Digital circuits; Hafnium oxide; MOSFET circuits; Predictive models; Stress; CMOSFETs; digital circuits; reliability; static random access memory (SRAM); trapping;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.885680
