Title :
High-performance MESFETs in MOCVD-grown gallium arsenide on silicon
Author :
Warner, D.J. ; Bradley, R.R. ; Joyce, T.B. ; Griffiths, R.J.M.
Author_Institution :
Plessey, Res. Caswell, Ltd., Towcester, UK
fDate :
8/4/1988 12:00:00 AM
Abstract :
The use of MOCVD for growing device quality GaAs on silicon material has not been widely reported. This letter describes an MOCVD growth process that has allowed GaAs MESFETs to be fabricated with transconductances as high as 185 mS/mm with an operating yield of greater than 78%. The structural stability of the grown layers was good with no peeling of the GaAs from the silicon substrate during the scribing and breaking of the wafer into individual device chips
Keywords :
CVD coatings; III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; GaAs; MESFETs; MOCVD; Si substrate; breaking; device quality; growth process; operating yield; peeling; scribing; structural stability; transconductances;
Journal_Title :
Electronics Letters
