Title :
First SiC dynistor
Author :
Dmitriev, V.A. ; Levinshtein, M.E. ; Vainshtein, Sergey N.
Author_Institution :
A.I. Ioffe Phys. Tech. Inst., Leningrad
fDate :
8/4/1988 12:00:00 AM
Abstract :
A four-layer dynistor has been made from SiC for the first time. Switching voltage is in the range from 30-50 V and switching time is about 10-8 s. The structure has been fabricated with a modified liquid-phase epitaxy (LPE)
Keywords :
semiconductor materials; silicon compounds; thyristors; 30 to 50 V; SiC; four-layer dynistor; modified liquid-phase epitaxy; switching time; switching voltage;
Journal_Title :
Electronics Letters
