• DocumentCode
    841243
  • Title

    First SiC dynistor

  • Author

    Dmitriev, V.A. ; Levinshtein, M.E. ; Vainshtein, Sergey N.

  • Author_Institution
    A.I. Ioffe Phys. Tech. Inst., Leningrad
  • Volume
    24
  • Issue
    16
  • fYear
    1988
  • fDate
    8/4/1988 12:00:00 AM
  • Firstpage
    1031
  • Lastpage
    1033
  • Abstract
    A four-layer dynistor has been made from SiC for the first time. Switching voltage is in the range from 30-50 V and switching time is about 10-8 s. The structure has been fabricated with a modified liquid-phase epitaxy (LPE)
  • Keywords
    semiconductor materials; silicon compounds; thyristors; 30 to 50 V; SiC; four-layer dynistor; modified liquid-phase epitaxy; switching time; switching voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191714
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841243