DocumentCode
84125
Title
Poly-Si Nanowire TFT With Raised Source/Drain and Nitride Spacer
Author
Tsung-Kuei Kang ; Ysung-Yu Yang
Author_Institution
Dept. of Electron. Eng., Feng-Chia Univ., Taichung, Taiwan
Volume
60
Issue
7
fYear
2013
fDate
Jul-13
Firstpage
2415
Lastpage
2418
Abstract
A raised source/drain poly-Si nanowire (NW) thin film transistor (TFT), together with a nitride spacer structure, is proposed and characterized. The undoped poly-Si region under the nitride spacer is considered to be an offset region and the drain electric field is effectively reduced. In addition, the poly-gate edge covering the nitride spacer serves as a field plate and induces an inversion layer, hence it maintains a high ON-current. Therefore, this proposed NW TFT exhibits a lower OFF-state leakage current, a higher ON/OFF current ratio, and an improved kink effect.
Keywords
elemental semiconductors; nanowires; silicon; thin film transistors; OFF-state leakage current; ON-OFF current ratio; Si; drain electric field; field plate; inversion layer; kink effect; nitride spacer structure; offset region; poly-gate edge; polysilicon nanowire TFT; raised source-drain NW thin film transistor; Kink effect; leakage current; nanowire (NW); nitride spacer; raised source/drain; thin film transistor (TFT);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2262075
Filename
6522467
Link To Document