DocumentCode
841265
Title
Ultra-thin-channelled GaAs MESFET with double-δ-doped layers
Author
Ishibashi, A. ; Funato, Kazuhiro ; Mori, Yojiro
Author_Institution
Sony Corp. Res. Centre, Yokohama
Volume
24
Issue
16
fYear
1988
fDate
8/4/1988 12:00:00 AM
Firstpage
1034
Lastpage
1035
Abstract
GaAs MESFETs with double-δ-doped layers have been fabricated with electron-beam-induced resist. The FET is made with the δ-doped channel embedded as shallow as 70 Å from the surface, and shows an intrinsic transconductance of 400 mS/mm for a gate length of about 1500 Å
Keywords
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; 1500 Å; GaAs; MESFETs; double-δ-doped layers; electron-beam-induced resist; gate length; intrinsic transconductance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191716
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