Title :
GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates
Author :
Ren, Fengyuan ; Chand, Naresh ; Garbinski, P. ; Pearton, S.J. ; Wu, C.S. ; Fullowan, T. ; Shah, Neil
Author_Institution :
AT&T Bell Labs., Murray Hill., NJ
fDate :
8/4/1988 12:00:00 AM
Abstract :
Using a very thin layer of GaAs (2.1 μm) on Si, the authors have fabricated GaAs MESFETs, 19 stage ring oscillators, and divide-by-2 frequency dividers with good yield. The MESFETs exhibited a maximum gm of 153 mS/mm. The DCFL 19 stage ring oscillators had a minimum propagation delay of 52 ps/gate at a power dissipation of 1.3 mW/gate with a yield of 40%. The divide-by-2 circuits performed the frequency dividing operation up to 1.8 GHz
Keywords :
III-V semiconductors; Schottky gate field effect transistors; dividing circuits; field effect integrated circuits; integrated logic circuits; molecular beam epitaxial growth; semiconductors; 1.8 GHz; GaAs; MESFETs; Si; frequency dividers; frequency dividing operation; minimum propagation delay; power dissipation; ring oscillators; yield;
Journal_Title :
Electronics Letters
