DocumentCode :
841353
Title :
1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE
Author :
Kitamura, Masayuki ; Takano, Shigeru ; Henmi, N. ; Sasaki, T. ; Yamada, Hiroyoshi ; Shinohara, Yui ; Hasumi, H. ; Mito, I.
Author_Institution :
Nec. Corp., Kawasaki
Volume :
24
Issue :
16
fYear :
1988
fDate :
8/4/1988 12:00:00 AM
Firstpage :
1045
Lastpage :
1046
Abstract :
1.5 μm band GaInAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 2.4 Gbit/s; GaInAs; InP; MOVPE; RZ modulation; grating substrates; low chirp single-longitudinal-mode operation; metalorganic vapour phase epitaxy; multiple-quantum-well distributed feedback laser diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
Filename :
191723
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=841353
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