DocumentCode
841353
Title
1.5 μm multiple-quantum-well distributed feedback laser diodes grown on corrugated InP by MOVPE
Author
Kitamura, Masayuki ; Takano, Shigeru ; Henmi, N. ; Sasaki, T. ; Yamada, Hiroyoshi ; Shinohara, Yui ; Hasumi, H. ; Mito, I.
Author_Institution
Nec. Corp., Kawasaki
Volume
24
Issue
16
fYear
1988
fDate
8/4/1988 12:00:00 AM
Firstpage
1045
Lastpage
1046
Abstract
1.5 μm band GaInAs multiple-quantum-well distributed feedback laser diodes have been successfully fabricated on InP grating substrates by metalorganic vapour phase epitaxy for the first time. Extremely low chirp single-longitudinal-mode operation at 2.4 Gbit/s RZ modulation has been realised
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 2.4 Gbit/s; GaInAs; InP; MOVPE; RZ modulation; grating substrates; low chirp single-longitudinal-mode operation; metalorganic vapour phase epitaxy; multiple-quantum-well distributed feedback laser diodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191723
Link To Document