• DocumentCode
    841360
  • Title

    Low-drive-voltage, low-loss AlGaAs/GaAs 2×2 switch

  • Author

    Wüthrich, C. ; Faist, J. ; Baer, W. ; Reinhart, F.K.

  • Author_Institution
    Inst. de Micro et Opto. Electron., EPFL., Lausanne, Switzerland
  • Volume
    24
  • Issue
    16
  • fYear
    1988
  • fDate
    8/4/1988 12:00:00 AM
  • Firstpage
    1047
  • Lastpage
    1048
  • Abstract
    Reports the realisation of a 2×2 switch using a Mach-Zehnder interferometer with tunable coupler sections. The structure is based on a GaAs-AlGaAs double hetero-structure with SnO2-doped In2O3 electrodes. At a wave-length of 1.15 μm, this device is characterised by a low switching voltage of 7.5 V and a low loss of 4 dB/cm. A high extinction ratio of 20 dB can be achieved
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; light interferometers; optical couplers; 1.15 micron; 7.5 V; GaAs-AlGaAs; In2O3:SnO2; Mach-Zehnder interferometer with tunable coupler sections; double hetero-structure; extinction ratio; loss; switching voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841360