Title :
Non-bulk Si-O bonding at the Si-SiO2 interface
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London
fDate :
8/18/1988 12:00:00 AM
Abstract :
A simple silicon dioxide bonding model is applied to a variety of films and shown to be applicable only for grown layers thicker than about 400 Å, indicating that `non-bulk´ bonding is present near to the silicon interface
Keywords :
bonds (chemical); elemental semiconductors; interface phenomena; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; 400 A; Si-SiO2; bonding model; films; interface; nonbulk Si-O bonding; semiconductor-insulator boundaries;
Journal_Title :
Electronics Letters
