DocumentCode
841695
Title
GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition
Author
Morita, E. ; Toda, Akira ; Kaneko, Kunihiko
Volume
24
Issue
17
fYear
1988
fDate
8/18/1988 12:00:00 AM
Firstpage
1094
Lastpage
1095
Abstract
Room temperature continuous-wave operation of a Ga0.5In 0.5P/(Al0.5Ga0.5)0.5In 0.5P double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition was obtained for the first time. The threshold current was 99 mA. The emission wavelength was around 650 nm, which was about 30 nm shorter than that of a similar laser grown on a (100)-oriented GaAs substrate
Keywords
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; substrates; (111)B GaAs substrate; 650 nm; 99 mA; DH lasers; GaAs substrate; GaInP-AlGaInP lasers; MOCVD; continuous-wave operation; disordered crystal; double-heterostructure laser; emission wavelength; metalorganic chemical vapour deposition; room temperature CW operation; semiconductor growth; semiconductors; threshold current; wavelength shortening;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191757
Link To Document