Title :
GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition
Author :
Morita, E. ; Toda, Akira ; Kaneko, Kunihiko
fDate :
8/18/1988 12:00:00 AM
Abstract :
Room temperature continuous-wave operation of a Ga0.5In 0.5P/(Al0.5Ga0.5)0.5In 0.5P double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour deposition was obtained for the first time. The threshold current was 99 mA. The emission wavelength was around 650 nm, which was about 30 nm shorter than that of a similar laser grown on a (100)-oriented GaAs substrate
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; substrates; (111)B GaAs substrate; 650 nm; 99 mA; DH lasers; GaAs substrate; GaInP-AlGaInP lasers; MOCVD; continuous-wave operation; disordered crystal; double-heterostructure laser; emission wavelength; metalorganic chemical vapour deposition; room temperature CW operation; semiconductor growth; semiconductors; threshold current; wavelength shortening;
Journal_Title :
Electronics Letters
