Growth of lanthanum manganate buffer layers for coated conductors via a metal-organic decomposition process

Author

Venkataraman, Kartik ; Hellstrom, Eric E. ; Paranthaman, Mariappan

Author_Institution

Appl. Supercond. Center, Univ. of Wisconsin-Madison, Madison, WI, USA

Volume

15

Issue

2

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

3005

Lastpage

3008

Abstract

Perovskite LaMnO₃ (LMO) in thin film embodiment has been identified as a potential candidate for use as a buffer layer in coated conductors. This paper delineates the process-properties relationships investigated for the metal-organic decomposition (MOD) growth of LMO thin films on bare cube-textured Ni-W tape sections. Epitaxial films of pseudocubic perovskite LMO were obtained for samples fired at 1100°C in a humidified forming gas (Ar/4% H₂, P_H2O∼2 Torr) ambient atmosphere. The surface morphology, epitaxy, and composition of the films are reported.

Keywords

buffer layers; epitaxial layers; lanthanum compounds; liquid phase deposition; superconducting tapes; surface morphology; 1100 C; LMO thin films; LaMnO₃; MOD growth; buffer layers; chemical solution deposition; coated conductors; cube-textured Ni-W tape; epitaxial films; humidified forming gas; metal substrate; metal-organic decomposition process; process-properties relationship; pseudocubic perovskite LMO; surface composition; surface epitaxy; surface morphology; thin film embodiment; Argon; Atmosphere; Buffer layers; Conductive films; Conductors; Epitaxial growth; Lanthanum; Surface morphology; Transistors; Water; Chemical solution deposition; LMO; coated conductor; lanthanum manganate; metal substrate;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2005.848702

Filename

1440301