• DocumentCode
    841705
  • Title

    AuBe ohmic contacts to p-InGaAlAs formed by rapid thermal annealing

  • Author

    Shen, T.C. ; Reed, Jeff ; Fan, Z.F. ; Gao, G.B. ; Morkoc, H.

  • Author_Institution
    Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    27
  • Issue
    23
  • fYear
    1991
  • Firstpage
    2187
  • Lastpage
    2189
  • Abstract
    AuBe ohmic contacts to p-In0.53Ga0.35Al0.12As (Be:5*1018 cm-3) formed by rapid thermal annealing (RTA) have been studied and compared with those formed by conventional alloying. Using thermally evaporated AuBe, specific contact resistances in the low mu Omega .cm2 range have been achieved by both methods. However, contacts made by RTA demonstrated good thermal stability whereas the contacts by conventional alloying degraded more than one order of magnitude at 250 degrees C for 100 h.
  • Keywords
    III-V semiconductors; aluminium compounds; annealing; beryllium alloys; contact resistance; gallium arsenide; gold alloys; indium compounds; ohmic contacts; Au-Be; AuBe-In 0.53Ga 0.35Al 0.12As; rapid thermal annealing; semiconductors; specific contact resistances; thermal stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911353
  • Filename
    104115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841705