• DocumentCode
    841713
  • Title

    High-efficiency Ku-band HBT amplifier with 1 W CW output power

  • Author

    Bartusiak, P. ; Henderson, Tim ; Kim, T. ; Khatibzadeh, A. ; Bayraktaroglu, B.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • Volume
    27
  • Issue
    23
  • fYear
    1991
  • Firstpage
    2189
  • Lastpage
    2190
  • Abstract
    A compact, high-voltage AlGaAs/GaAs HBT was developed for applications in the Ku band using carbon-doped base structures. A single unit-cell device, operating under common-emitter mode and 10 V collector bias, produced 1.0 W CW output power at 15 GHz with 5.0 dB gain and 42% power-added efficiency. The power density of the device was a record 5.6 W/mm of emitter length.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; solid-state microwave circuits; solid-state microwave devices; 1 W; 10 V; 15 GHz; 42 percent; 5 dB; Ku band; SHF; collector bias; common-emitter mode; output power; power density; power-added efficiency; semiconductors; single unit-cell device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911354
  • Filename
    104116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841713