• DocumentCode
    841760
  • Title

    Improved self-boot-strapped gain enhancement technique for GaAs amplifiers

  • Author

    Yang, H.C. ; Allstot, David J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR
  • Volume
    24
  • Issue
    17
  • fYear
    1988
  • fDate
    8/18/1988 12:00:00 AM
  • Firstpage
    1101
  • Lastpage
    1102
  • Abstract
    Reports an improved self-boot-strapped gain enhancement circuit structure for GaAs MESFET amplifiers. Unlike previously reported work, this circuit operates based on first-order characteristics of GaAs MESFETs and requires no extra processing steps. Analysis shows that the new circuit also provides a higher output resistance
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; GaAs; GaAs amplifiers; MESFET amplifiers; first-order characteristics; gain enhancement circuit structure; higher output resistance; improved circuit; self-boot-strapped gain enhancement technique; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841760