Title :
Improved self-boot-strapped gain enhancement technique for GaAs amplifiers
Author :
Yang, H.C. ; Allstot, David J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR
fDate :
8/18/1988 12:00:00 AM
Abstract :
Reports an improved self-boot-strapped gain enhancement circuit structure for GaAs MESFET amplifiers. Unlike previously reported work, this circuit operates based on first-order characteristics of GaAs MESFETs and requires no extra processing steps. Analysis shows that the new circuit also provides a higher output resistance
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; GaAs; GaAs amplifiers; MESFET amplifiers; first-order characteristics; gain enhancement circuit structure; higher output resistance; improved circuit; self-boot-strapped gain enhancement technique; semiconductors;
Journal_Title :
Electronics Letters
