The Effect of Sulfur Treatment on the Temperature-Dependent Performance of InGaP/GaAs HBTs

Author

Cheng, Shiou-Ying ; Fu, Ssu-I ; Chen, Tzu-Pin ; Lai, Po-Hsien ; Liu, Rong-Chau ; Chu, Kuei-Yi ; Chen, Li-Yang ; Liu, Wen-Chau

Author_Institution

Dept. of Electron. Eng., Nat. Ilan Univ.

Volume

6

Issue

4

fYear

2006

Firstpage

500

Lastpage

508

Abstract

Temperature-dependent dc characteristics and RF performances of InGaP/GaAs heterojunction bipolar transistors with sulfur treatment are systematically studied. The base-surface-recombination current, specific contact resistance, and sheet resistance of the studied devices can be effectively reduced by sulfur treatment. Practically, long-time sulfur treatment is not appropriate. In this paper, the studied device with the sulfur treatment for 12-15 min is a good choice. Experimentally, the collector-emitter offset voltage DeltaV_CE and dc current gain with sulfur treatment can be substantially reduced and increased, respectively, over the 300-K-400-K temperature range. Moreover, as the temperature is increased, the device with sulfur treatment exhibits temperature-independent or thermally stable performances. The devices with sulfur treatment also exhibit improved RF characteristics

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; sulphur; 12 to 15 mins; 300 to 400 K; InGaP-GaAs; S; heterojunction bipolar transistors; offset voltage; sulfur passivation; sulfur treatment; temperature dependent; Bonding; Contact resistance; Etching; Gallium arsenide; Heterojunction bipolar transistors; Passivation; Radio frequency; Spontaneous emission; Surface treatment; Voltage; Heterojunction bipolar transistor (HBT); offset voltage; sulfur passivation; temperature dependent;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.883154

Filename

4019407