Title :
A Radiation-Hardened I2L 8 Ã\x97 8 Multiplier Circuit
Author :
Doyle, B.R. ; Kreps, S.A. ; van Vonno, N.W. ; Lake, G.W.
Author_Institution :
Harris Semiconductor Melbourne, Florida 32901
Abstract :
Development of improved Substrate Fed I2L (SFL) processing has been combined with geometry and fanout constraints to design a radiation hardened LSI 8 × 8 Multiplier. This paper will describe details of the process and circuit design and give resultant electrical and radiation test performance.
Keywords :
Circuit synthesis; Circuit testing; Epitaxial layers; Geometry; Limiting; Neutrons; Resistors; Substrates; Surface resistance; Surface topography;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1979.4330218
