DocumentCode :
841837
Title :
Energy and Spatial Distribution of Traps in 
nMOSFETs
Author :
Crupi, Isodiana ; Degraeve, Robin ; Govoreanu, Bogdan ; Brunco, David P. ; Roussel, Philippe J. ; Van Houdt, Jan
Author_Institution :
Dipt. di Fisica e Astronomia, Catania Univ.
Volume :
6
Issue :
4
fYear :
2006
Firstpage :
509
Lastpage :
516
Abstract :
The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2 O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack
Keywords :
MOSFET; interface states; sapphire; silicon compounds; SiO2-Al2O3; bulk traps; charge-pumping measurements; dielectric stack; energy distribution; gate dielectrics; interface traps; nMOSFET; spatial distribution; spatial profiling; trap generation; Charge pumps; Current measurement; Dielectric materials; Dielectric measurements; Extraterrestrial measurements; Frequency; High K dielectric materials; High-K gate dielectrics; MOSFETs; Voltage; Bulk traps; charge pumping (CP); energy distribution; high-$k$
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2006.883152
Filename :
4019413
Link To Document :
