• DocumentCode
    841837
  • Title

    Energy and Spatial Distribution of Traps in \\hbox {SiO}_{2}/\\hbox {Al}_{2}\\hbox {O}_{3} nMOSFETs

  • Author

    Crupi, Isodiana ; Degraeve, Robin ; Govoreanu, Bogdan ; Brunco, David P. ; Roussel, Philippe J. ; Van Houdt, Jan

  • Author_Institution
    Dipt. di Fisica e Astronomia, Catania Univ.
  • Volume
    6
  • Issue
    4
  • fYear
    2006
  • Firstpage
    509
  • Lastpage
    516
  • Abstract
    The energy and spatial profiling of the interface and near-interface traps in n-channel MOSFETs with SiO2/Al2 O3 gate dielectrics is investigated by charge-pumping (CP) measurements. By increasing the amplitude as well as lowering the frequency of the gate pulse, an increase of the charge recombined per cycle was observed, and it was explained by the contributions of additional traps located higher in energy and deeper in position at the SiO2/Al2O3 interface. In addition, CP currents, acquired after different constant voltage stress, have been used to investigate the trap generation in this dielectric stack
  • Keywords
    MOSFET; interface states; sapphire; silicon compounds; SiO2-Al2O3; bulk traps; charge-pumping measurements; dielectric stack; energy distribution; gate dielectrics; interface traps; nMOSFET; spatial distribution; spatial profiling; trap generation; Charge pumps; Current measurement; Dielectric materials; Dielectric measurements; Extraterrestrial measurements; Frequency; High K dielectric materials; High-K gate dielectrics; MOSFETs; Voltage; Bulk traps; charge pumping (CP); energy distribution; high-$k$ dielectrics; interface traps; spatial profiling;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2006.883152
  • Filename
    4019413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841837