Title :
Recently Demonstrated Radiation Immunity of Symmetrical Cell I2L
Author :
Black, B.W. ; Ragonese, L.J.
Author_Institution :
General Electric Co. RESD, 3198 Chestnut St. Philadelphia, Pa. 19101 (215) 823-4472
Abstract :
A significant degree of radiation hardness has been achieved for I2L devices using symmetrical cell topologies. MSI complexity functions have been implemented with no degradation in device hardness from individual gate performance. Short pulse upset thresholds of 2×1010 Rad (Si)/sec and 1x1014 neutrons/cm2 fluence immunity have been demonstrated.
Keywords :
Degradation; Epitaxial layers; Linear circuits; Logic devices; Logic gates; Neutrons; Performance gain; Radiation hardening; Surfaces; Topology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1979.4330220
