• DocumentCode
    841843
  • Title

    Recently Demonstrated Radiation Immunity of Symmetrical Cell I2L

  • Author

    Black, B.W. ; Ragonese, L.J.

  • Author_Institution
    General Electric Co. RESD, 3198 Chestnut St. Philadelphia, Pa. 19101 (215) 823-4472
  • Volume
    26
  • Issue
    6
  • fYear
    1979
  • Firstpage
    4740
  • Lastpage
    4743
  • Abstract
    A significant degree of radiation hardness has been achieved for I2L devices using symmetrical cell topologies. MSI complexity functions have been implemented with no degradation in device hardness from individual gate performance. Short pulse upset thresholds of 2×1010 Rad (Si)/sec and 1x1014 neutrons/cm2 fluence immunity have been demonstrated.
  • Keywords
    Degradation; Epitaxial layers; Linear circuits; Logic devices; Logic gates; Neutrons; Performance gain; Radiation hardening; Surfaces; Topology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1979.4330220
  • Filename
    4330220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841843