Title :
BSCCO/STO/BSCCO structures by the MOD method
Author :
Iwasaki, H. ; Machikawa, S. ; Yufune, S. ; Ishibashi, T. ; Sato, K.
Author_Institution :
Graduate Sch. of Eng., Tokyo Univ. of Agric. & Technol., Japan
fDate :
6/1/2005 12:00:00 AM
Abstract :
Bi2Sr2CaCu2Ox(BSCCO)/SrTiO3(STO)/BSCCO trilayer structures were prepared by the metal-organic decomposition (MOD) method. In this study, annealing condition of BSCCO thin films prepared by the MOD method were investigated. High quality films having critical temperature (Tc) of 84 K were obtained on STO [001] substrate by a 2-step annealing process with 100% O2 for 2 h at 870°C and 10% O2 for 2 h at 885°C. The STO layer prepared by the MOD method was grown epitaxially on the BSCCO thin films, and the top BSCCO layer was also grown epitaxially on the STO layer. The BSCCO/STO/BSCCO structure showed a Tc of 77 K.
Keywords :
annealing; bismuth compounds; decomposition; high-temperature superconductors; liquid phase deposition; multilayers; strontium compounds; superconducting epitaxial layers; superconducting transition temperature; BSCCO thin films; BSCCO-STO-BSCCO trilayer structures; BiSrCaCuO-SrTiO3-BiSrCaCuO; MOD method; annealing condition; annealing process; critical temperature; crystal growth; epitaxial growth; high quality films; metal-organic decomposition; Annealing; Bismuth compounds; Insulation; Molecular beam epitaxial growth; Nonhomogeneous media; Pulsed laser deposition; Superconducting devices; Superconducting epitaxial layers; Temperature; Transistors; BSCCO/STO/BSCCO trilayer structure; MOD method; critical temperature; crystal growth;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2005.848738
