BSCCO/STO/BSCCO structures by the MOD method

Author

Iwasaki, H. ; Machikawa, S. ; Yufune, S. ; Ishibashi, T. ; Sato, K.

Author_Institution

Graduate Sch. of Eng., Tokyo Univ. of Agric. & Technol., Japan

Volume

15

Issue

2

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

3058

Lastpage

3061

Abstract

Bi₂Sr₂CaCu₂O_x(BSCCO)/SrTiO₃(STO)/BSCCO trilayer structures were prepared by the metal-organic decomposition (MOD) method. In this study, annealing condition of BSCCO thin films prepared by the MOD method were investigated. High quality films having critical temperature (Tc) of 84 K were obtained on STO [001] substrate by a 2-step annealing process with 100% O₂ for 2 h at 870°C and 10% O₂ for 2 h at 885°C. The STO layer prepared by the MOD method was grown epitaxially on the BSCCO thin films, and the top BSCCO layer was also grown epitaxially on the STO layer. The BSCCO/STO/BSCCO structure showed a Tc of 77 K.

Keywords

annealing; bismuth compounds; decomposition; high-temperature superconductors; liquid phase deposition; multilayers; strontium compounds; superconducting epitaxial layers; superconducting transition temperature; BSCCO thin films; BSCCO-STO-BSCCO trilayer structures; BiSrCaCuO-SrTiO₃-BiSrCaCuO; MOD method; annealing condition; annealing process; critical temperature; crystal growth; epitaxial growth; high quality films; metal-organic decomposition; Annealing; Bismuth compounds; Insulation; Molecular beam epitaxial growth; Nonhomogeneous media; Pulsed laser deposition; Superconducting devices; Superconducting epitaxial layers; Temperature; Transistors; BSCCO/STO/BSCCO trilayer structure; MOD method; critical temperature; crystal growth;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/TASC.2005.848738

Filename

1440315