Title :
Device interconnection technology for advanced thermal conduction modules
Author :
Ray, Sudipta K. ; Beckham, Keith F. ; Master, Raj N.
Author_Institution :
IBM Corp., Hopwell Junction, NY, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
The use of area array solder bumps on silicon devices known as controlled collapse chip connection (C4) balls for terminating logic and memory devices to ceramic substrates has been extended in both interconnection density and total number of chip I/O connections per module. In addition, a novel materials set, namely glass-ceramic with copper internal metallization along with thin film redistribution wiring on the top surface, has been introduced for multilayered ceramic substrates. Key elements of advanced glass-ceramic substrate technology relevant to flip-chip joining are reviewed. This is followed by a discussion of device join and replace processes used in advanced thermal conduction modules (ATCMs). These models have decoupling capacitors which are attached by C4 solder reflow. Optimization of the top surface metallurgy and device join parameters necessary to achieve reliable joining of more than 70,000 solder balls per module is discussed
Keywords :
flip-chip devices; multichip modules; packaging; soldering; thin film circuits; ATCMs; C4 solder reflow; advanced thermal conduction modules; area array solder bumps; ceramic substrates; controlled collapse chip connection; decoupling capacitors; device interconnection technology; device join parameters; flip-chip joining; glass-ceramic substrate technology; interconnection density; materials set; multilayered ceramic substrates; number of chip I/O connections; reflow soldering; thermal conduction modules; thin film redistribution wiring; top surface metallurgy; Ceramics; Conducting materials; Copper; Inorganic materials; Logic arrays; Logic devices; Metallization; Silicon devices; Substrates; Thermal conductivity;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on