Title :
Digital integrated circuit using GaInAs/InP heterojunction bipolar transistors
Author :
Topham, P.J. ; Thompson, John ; Griffith, Isaac ; Hollis, B.A. ; Hiams, N.A. ; Parton, J.G. ; Goodfellow, R.C.
Author_Institution :
Plessey Res. Caswell Ltd., Allen Clark Res. Centre, Towcester, UK
Abstract :
A divider circuit using GaInAs/InP heterojunction bipolar transistors is reported for the first time. This is the first monolithic digital integrated circuit using these devices. The divider has been clocked at 5 GHz, which is the fastest toggle rate for a bipolar circuit on InP.
Keywords :
III-V semiconductors; bipolar integrated circuits; digital integrated circuits; emitter-coupled logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated logic circuits; 5 GHz; ECL; GaInAs-InP; HBT; III-V semiconductors; divider circuit; heterojunction bipolar transistors; logic circuits; monolithic digital integrated circuit; toggle rate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890749
