• DocumentCode
    841984
  • Title

    Negative transconductance superlattice base bipolar transistor

  • Author

    Capasso, Federico ; Vengurlekar, A.S. ; Hutchinson, Allan ; Tsang, W.T.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    25
  • Issue
    17
  • fYear
    1989
  • Firstpage
    1117
  • Lastpage
    1119
  • Abstract
    The operation of a new superlattice base bipolar transistor is reported. Negative transconductance in the common-base transfer characteristic is achieved at an emitter-base voltage in excellent agreement with the bias required to suppress tunnel injection into the first miniband. In the common emitter configuration a corresponding peak in the current gain of the device is obtained as the base current is increased.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; negative resistance; semiconductor superlattices; GaInAs-InP; III-V semiconductors; bias; common emitter configuration; common-base transfer characteristic; current gain; emitter-base voltage; negative transconductance; superlattice base bipolar transistor; tunnel injection suppression;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890750
  • Filename
    41902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=841984