Title :
Hydrogen and Deuterium Ion Bombardment Effects in SiO2 Films
Author :
Belson, J. ; Wilson, I.H.
Author_Institution :
Department of Electronic and Electrical Engineering University of Surrey, Guildford, England
Keywords :
Annealing; Capacitance-voltage characteristics; Deuterium; Hydrogen; Interface states; Nitrogen; Protons; Silicon; Space charge; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1979.4330234
