Title :
Low-threshold electrically pumped vertical-cavity surface-emitting microlasers
Author :
Jewell, J.L. ; Scherer, Axel ; McCall, S.L. ; Lee, Y.H. ; Walker, Stuart ; Harbison, J.P. ; Florez, L.T.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
The authors present vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several mu m exhibiting room-temperature pulsed current thresholds as low as 1.3 mA with 958 nm output wavelength.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; semiconductor junction lasers; 1.3 mA; 958 nm; GaInAs; III-V semiconductor; electrically pumped; low threshold operation; quantum wells; room-temperature pulsed current thresholds; semiconductor lasers; surface-emitting microlasers; vertical-cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890754
