• DocumentCode
    842022
  • Title

    Low-threshold electrically pumped vertical-cavity surface-emitting microlasers

  • Author

    Jewell, J.L. ; Scherer, Axel ; McCall, S.L. ; Lee, Y.H. ; Walker, Stuart ; Harbison, J.P. ; Florez, L.T.

  • Author_Institution
    AT&T Bell Labs., Holmdel, NJ, USA
  • Volume
    25
  • Issue
    17
  • fYear
    1989
  • Firstpage
    1123
  • Lastpage
    1124
  • Abstract
    The authors present vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several mu m exhibiting room-temperature pulsed current thresholds as low as 1.3 mA with 958 nm output wavelength.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; semiconductor junction lasers; 1.3 mA; 958 nm; GaInAs; III-V semiconductor; electrically pumped; low threshold operation; quantum wells; room-temperature pulsed current thresholds; semiconductor lasers; surface-emitting microlasers; vertical-cavity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890754
  • Filename
    41906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842022