• DocumentCode
    842029
  • Title

    New field-effect transistor with quantum wire and modulation-doped heterostructures

  • Author

    Tsubaki, Keishi ; Fukui, T. ; Tokura, Yasuhiro ; Saito, Hiroshi ; Susa, N.

  • Author_Institution
    NTT Basic Res. Labs., Tokyo
  • Volume
    24
  • Issue
    20
  • fYear
    1988
  • fDate
    9/29/1988 12:00:00 AM
  • Firstpage
    1267
  • Lastpage
    1269
  • Abstract
    A new field-effect transistor, consisting of an AlGaAs/GaAs heterostructure and an (AlAs)0.25(GaAs)0.75 vertical superlattice, is fabricated. It has a large transconductance of 14 mS/mm at a gate length of 250 μm, corresponding to a transconductance of 3.5 S/mm for 1 μm gate length. Hall measurement revealed a novel FET operation mode called `velocity modulation´
  • Keywords
    Hall effect; III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor superlattices; 250 micron; AlGaAs:Si-AlAs-GaAs; Hall measurement; field-effect transistor; gate length; modulation-doped heterostructures; operation mode; quantum wire; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191790
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842029