Title :
New field-effect transistor with quantum wire and modulation-doped heterostructures
Author :
Tsubaki, Keishi ; Fukui, T. ; Tokura, Yasuhiro ; Saito, Hiroshi ; Susa, N.
Author_Institution :
NTT Basic Res. Labs., Tokyo
fDate :
9/29/1988 12:00:00 AM
Abstract :
A new field-effect transistor, consisting of an AlGaAs/GaAs heterostructure and an (AlAs)0.25(GaAs)0.75 vertical superlattice, is fabricated. It has a large transconductance of 14 mS/mm at a gate length of 250 μm, corresponding to a transconductance of 3.5 S/mm for 1 μm gate length. Hall measurement revealed a novel FET operation mode called `velocity modulation´
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor superlattices; 250 micron; AlGaAs:Si-AlAs-GaAs; Hall measurement; field-effect transistor; gate length; modulation-doped heterostructures; operation mode; quantum wire; transconductance;
Journal_Title :
Electronics Letters
