DocumentCode
842061
Title
High-speed characteristics at high input optical power of GaInAsP electroabsorption modulators
Author
Suzuki, M. ; Tanaka, Hiroya ; Akiba, Shigeyuki
Author_Institution
KDD Meguro R&D Labs., Tokyo
Volume
24
Issue
20
fYear
1988
fDate
9/29/1988 12:00:00 AM
Firstpage
1272
Lastpage
1273
Abstract
High-speed characteristics at high input optical power levels of GaInAsP double heterostructure electroabsorption modulators are investigated. It is shown that the bandwidth degradation due to high input optical power is strongly dependent on the absorption coefficient. A design to maintain high-speed characteristics under milliwatt range output power operation, and experimental results including a 100 km single-mode fibre pulse transmission experiment are demonstrated
Keywords
III-V semiconductors; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; optical modulation; GaInAsP; absorption coefficient; bandwidth degradation; double heterostructure; electroabsorption modulators; high input optical power; milliwatt range output power; single-mode fibre pulse transmission experiment;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191793
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