Title :
High-speed characteristics at high input optical power of GaInAsP electroabsorption modulators
Author :
Suzuki, M. ; Tanaka, Hiroya ; Akiba, Shigeyuki
Author_Institution :
KDD Meguro R&D Labs., Tokyo
fDate :
9/29/1988 12:00:00 AM
Abstract :
High-speed characteristics at high input optical power levels of GaInAsP double heterostructure electroabsorption modulators are investigated. It is shown that the bandwidth degradation due to high input optical power is strongly dependent on the absorption coefficient. A design to maintain high-speed characteristics under milliwatt range output power operation, and experimental results including a 100 km single-mode fibre pulse transmission experiment are demonstrated
Keywords :
III-V semiconductors; electroabsorption; gallium arsenide; indium compounds; optical communication equipment; optical modulation; GaInAsP; absorption coefficient; bandwidth degradation; double heterostructure; electroabsorption modulators; high input optical power; milliwatt range output power; single-mode fibre pulse transmission experiment;
Journal_Title :
Electronics Letters
