Optical and Structural Properties of InGaN–AlGaN Ultraviolet Light-Emitting Diodes

Author

Kim, Sang-Mook ; Kim, Jae Bum ; Jhin, Junggeun ; Baek, Jong Hyeob ; Lee, In Hwan ; Jung, Gun Young

Author_Institution

Korea Photonics Technol. Inst., Gwangju

Volume

20

Issue

23

fYear

2008

Firstpage

1911

Lastpage

1913

Abstract

We fabricated and investigated the performances of InGaN-AlGaN ultraviolet (UV) light-emitting diodes (LEDs) emitting at 380 nm. The output power of a conventional LED, a patterned sapphire substrate LED (PSS LED), and a PSS flip-chip LED (PSS FCLED) were about 0.94, 1.86, and 5.18 mW, respectively, at a forward injection current of 20 mA. These results indicate that the light output-powers of the PSS LED and PSS FCLED were enhanced as much as 97% and 451% compared to the conventional LED. Subsequent optical simulations confirm the remarkable enhancements in optical power of the PSS FCLED at UV wavelengths.

Keywords

III-V semiconductors; aluminium compounds; flip-chip devices; gallium compounds; indium compounds; light emitting diodes; optical fabrication; sapphire; Al₂O₃; InGaN-AlGaN; UV LED; current 20 mA; flip-chip LED; optical power; optical property; optical simulation; patterned sapphire substrate; structural property; ultraviolet light-emitting diode; AlGaN; flip-chip; light-emitting diodes (LEDs); patterned sapphire substrate (PSS); silicon optical bench (SiOB); ultraviolet (UV);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2004700

Filename

4604720