Title :
Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix
Author :
Lv, X.Q. ; Liu, N. ; Jin, P. ; Wang, Z.G.
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing
Abstract :
Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size dispersion of InAs QDs, resulting in the broadening of optical gain spectrum.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; self-assembly; semiconductor quantum dots; superluminescent diodes; AlGaAs; InAs-AlGaAs; broadband emitting superluminescent diodes; indium adatoms; optical gain spectrum broadening; self-assembled quantum dots; short migration length; ultrawide emitting spectrum; AlGaAs matrix; broadband emitting; quantum dots (QDs); superluminescent diodes (SLDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.2004696
