High-temperature leakage current suppression in CMOS integrated circuits

It has been found that the diffusion component of the p-n junction drain-to-body reverse leakage current in an MOS transistor differs by as much as three orders of magnitude depending on whether it is fabricated in a substrate well or directly in the substrate. A theoretical description of the leakage suppression exhibited by a p-n junction in a well is confirmed by measurement using a commercially available 3 mu m CMOS process, operating at temperatures up to 250 degrees C.