Inverse staggered poly-Si and amorphous Si double structure TFT´s for LCD panels with peripheral driver circuits integration

Author

Aoyama, Takashi ; Ogawa, Kazuhiro ; Mochizuki, Yasuhiro ; Konishi, Nobutake

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

Volume

43

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

701

Lastpage

705

Abstract

Inverse staggered polycrystalline silicon (poly-Si) and hydrogenated amorphous silicon (a-Si:H) double structure thin-film transistors (TFT´s) are fabricated based on the conventional a-Si:H TFT process on a single glass substrate. After depositing a thin (20 nm) a-Si:H using the plasma CVD technique at 300°C, Ar⁺ and XeCl (300 mJ/cm²) lasers are irradiated successively, and then a thick a-Si:H (200 nm) and n⁺ Si layers are deposited again. The field effect mobilities of 10 and 0.5 cm ²/V·s are obtained for the laser annealed poly-Si and the a-Si:H (without annealing) TFT´s, respectively

Keywords

amorphous semiconductors; driver circuits; elemental semiconductors; field effect integrated circuits; flat panel displays; integrated circuit technology; laser beam annealing; liquid crystal displays; plasma CVD; silicon; thin film transistors; 20 nm; 200 nm; 300 C; Ar; Ar⁺ laser; LCD panels; Si:H; XeCl; XeCl laser; a-Si:H TFT process; amorphous Si TFT; double structure TFT; field effect mobilities; inverse staggered TFT; laser annealed semiconductors; peripheral driver circuits integration; plasma CVD technique; poly-Si TFT; single glass substrate; Amorphous materials; Annealing; Costs; Driver circuits; Glass; Liquid crystal displays; Semiconductor films; Silicon; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.491245

Filename

491245