• DocumentCode
    842150
  • Title

    Continuous-wave operation of lateral current injection multiquantum-well laser

  • Author

    Furuya, Atsushi ; Makiuchi, M. ; Wada, O.

  • Author_Institution
    Fijitsu Labs. Ltd., Atsugi
  • Volume
    24
  • Issue
    20
  • fYear
    1988
  • fDate
    9/29/1988 12:00:00 AM
  • Firstpage
    1282
  • Lastpage
    1283
  • Abstract
    Continuous-wave operation of an AlGaAs/GaAs lateral current injection multiquantum-well laser at room temperatures has been achieved by improving the structure and fabrication process. The laser has exhibited a threshold current of 47 mA and a differential quantum efficiency of 11%
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 11 percent; 47 mA; AlGaAs-GaAs; continuous wave operation; differential quantum efficiency; fabrication process; lateral current injection multiquantum-well laser; room temperatures; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191800