DocumentCode
842150
Title
Continuous-wave operation of lateral current injection multiquantum-well laser
Author
Furuya, Atsushi ; Makiuchi, M. ; Wada, O.
Author_Institution
Fijitsu Labs. Ltd., Atsugi
Volume
24
Issue
20
fYear
1988
fDate
9/29/1988 12:00:00 AM
Firstpage
1282
Lastpage
1283
Abstract
Continuous-wave operation of an AlGaAs/GaAs lateral current injection multiquantum-well laser at room temperatures has been achieved by improving the structure and fabrication process. The laser has exhibited a threshold current of 47 mA and a differential quantum efficiency of 11%
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; 11 percent; 47 mA; AlGaAs-GaAs; continuous wave operation; differential quantum efficiency; fabrication process; lateral current injection multiquantum-well laser; room temperatures; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191800
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