DocumentCode :
842194
Title :
Studies of yttrium oxide films prepared by RF magnetron sputtering
Author :
Shih, I.
Volume :
24
Issue :
20
fYear :
1988
fDate :
9/29/1988 12:00:00 AM
Firstpage :
1287
Lastpage :
1289
Abstract :
Films of yttrium oxide (Y2O3) were deposited on Si substrates from a Y2O3 target by RF magnetron sputtering. MIS capacitors in the form of Al and Y2O3 (400 Å)-Si were then fabricated. The leakage current density was about 10-6 A/cm2 at 1.3×106 V/cm, and the breakdown field of the films was about 2.75×106 V/cm. The dielectric constant of the sputtered Y2O3 was found to be about 12-12.7
Keywords :
aluminium; metal-insulator-semiconductor devices; permittivity; silicon; sputtered coatings; yttrium compounds; Al-Y2O3-Si; MIS capacitors; RF magnetron sputtering; dielectric constant; leakage current density;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
Filename :
191804
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=842194
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