• DocumentCode
    842194
  • Title

    Studies of yttrium oxide films prepared by RF magnetron sputtering

  • Author

    Shih, I.

  • Volume
    24
  • Issue
    20
  • fYear
    1988
  • fDate
    9/29/1988 12:00:00 AM
  • Firstpage
    1287
  • Lastpage
    1289
  • Abstract
    Films of yttrium oxide (Y2O3) were deposited on Si substrates from a Y2O3 target by RF magnetron sputtering. MIS capacitors in the form of Al and Y2O3 (400 Å)-Si were then fabricated. The leakage current density was about 10-6 A/cm2 at 1.3×106 V/cm, and the breakdown field of the films was about 2.75×106 V/cm. The dielectric constant of the sputtered Y2O3 was found to be about 12-12.7
  • Keywords
    aluminium; metal-insulator-semiconductor devices; permittivity; silicon; sputtered coatings; yttrium compounds; Al-Y2O3-Si; MIS capacitors; RF magnetron sputtering; dielectric constant; leakage current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842194