Device characteristics of a 30-V-class thin-film SOI power MOSFET

Author

Matsumoto, Satoshi ; Kim, II-Jung ; Sakai, Tatsuo ; Fukumitsu, Takao ; Yachi, Toshiaki

Author_Institution

NTT Interdisciplinary Res. Labs., Tokyo, Japan

Volume

43

Issue

5

fYear

1996

fDate

5/1/1996 12:00:00 AM

Firstpage

746

Lastpage

752

Abstract

A 30-V thin-film SOI power MOSFET having a tungsten polycide gate with a linear gate topology has been fabricated at a practical device level. Its electrical characteristics were successfully demonstrated for the first time. The experimental device has 1010 unit cells and a total gate width of 4.04 cm, It has a specific on-resistance of 92 mΩ·mm² and breakdown voltage of 33 V. The device´s various parasitic capacitance characteristics were measured and compared with those of a lateral power MOSFET fabricated on a bulk-silicon substrate

Keywords

capacitance; characteristics measurement; power MOSFET; silicon-on-insulator; thin film transistors; 30 V; 33 V; breakdown voltage; electrical characteristics; gate width; linear gate topology; parasitic capacitance characteristics; polycide gate; specific on-resistance; thin-film SOI power MOSFET; Capacitance measurement; Electric variables; MOSFET circuits; Parasitic capacitance; Power MOSFET; Power measurement; Substrates; Thin film devices; Topology; Tungsten;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.491251

Filename

491251