Title :
Effects of gamma radiation on threshold voltages of trench isolated CMOS
Author :
Medhurst, P L ; Foster, D J
Author_Institution :
Plessey Res. (Caswell
Abstract :
Gamma radiation effects on trench isolated CMOS transistors and sidewall parasitic devices are described. Low dose saturation was observed for biased devices, this being attributable to low volume oxide films inherent to trench technology. Leakage currents generated in NMOS transistors were observed to saturate with cumulative irradiation.
Keywords :
CMOS integrated circuits; gamma-ray effects; leakage currents; CMOS transistors; NMOS transistors; biased devices; gamma radiation; leakage currents; low dose saturation; low volume oxide films; radiation effects; sidewall parasitic devices; threshold voltages; trench isolated CMOS;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890775
