Title :
Interface and oxide charge effects on DMOS channel mobility
Author :
Schrimpf, R.D. ; Galloway, K.F. ; Wahle, P.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
The channel mobility in n-channel DMOS power transistors was examined as a function of interface- and oxide-trapped-charge densities. Interface trapped charge was the primary contributor to mobility degradation. Any apparent dependence of mobility on oxide-trapped-charge density can be attributed to correlation between interface- and oxide-trapped-charge densities.
Keywords :
carrier mobility; insulated gate field effect transistors; interface phenomena; power transistors; DMOS power transistors; channel mobility; interface trapped charge; mobility degradation; n-channel; oxide charge effects; oxide-trapped-charge densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890776
