Title :
Mobility behaviour of n-channel and p-channel MOSFETs with oxynitride gate dielectrics formed by low-pressure rapid thermal chemical vapor deposition
Author :
Vogel, Eric M. ; Hill, Winford L. ; Misra, Veena ; McLarty, Peter K. ; Wortman, Jimmie J. ; Hauser, J.R. ; Morfouli, P. ; Ghibaudo, Gérard ; Ouisse, T.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
The electric field dependence of electron and hole mobility was investigated in n-channel and p-channel metal-oxide-semiconductor field-effect transistors with oxynitride gate dielectrics formed using low-pressure rapid thermal chemical vapor deposition with SiH4, N2O and NH3 as the reactive gases. The peak electron mobility was observed to decrease with increasing nitrogen and hydrogen concentration whereas the high-field mobility degradation was improved. The hole mobility was observed to decrease for all electric fields. A self-consistent physical explanation for the observed electron and hole mobility behaviour is suggested based on the electrical results. We attribute the observed mobility characteristics mainly to the trapping behaviour of these films
Keywords :
MOSFET; chemical vapour deposition; dielectric thin films; electron mobility; hole mobility; rapid thermal processing; MOSFET; N2O; NH3; SiH4; electric field dependence; electron mobility; high-field mobility degradation; hole mobility; oxynitride gate dielectrics; rapid thermal chemical vapor deposition; reactive gases; self-consistent physical explanation; trapping behaviour; Charge carrier processes; Chemical vapor deposition; Dielectrics; Electron mobility; FETs; Gases; Hydrogen; MOSFETs; Nitrogen; Thermal degradation;
Journal_Title :
Electron Devices, IEEE Transactions on
