• DocumentCode
    842398
  • Title

    Radiation-Hardening Static NMOS Rams

  • Author

    King, E.E.

  • Author_Institution
    Naval Research Laboratory Washington, D. C. 20375
  • Volume
    26
  • Issue
    6
  • fYear
    1979
  • Firstpage
    5060
  • Lastpage
    5064
  • Abstract
    The results of an effort to total-dose radiation harden N-channel static random-access-memories are described. Both an aluminum-gate and a silicon-gate process were hardened to a level greater than 104 rads(Si) on a semiconductor memory vendor´s production line. The aluminum-gate RAMs have been found to operate to well above 105 rads(Si) at low dose rates, suggesting their suitability for space applications.
  • Keywords
    Circuits; Laboratories; Large scale integration; Leakage current; MOS devices; Production; Radiation hardening; Semiconductor memory; Space technology; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1979.4330273
  • Filename
    4330273
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=842398