Characterization of AlGaN/GaN Metal- Semiconductor-Metal Photodetectors With a Low-Temperature AlGaN Interlayer

Author

Lee, K.H. ; Chang, P.C. ; Chang, S.J. ; Wang, Y.C. ; Yu, C.L. ; Wu, S.L.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

Volume

9

Issue

6

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

723

Lastpage

727

Abstract

AlGaN/GaN metal-semiconductor-metal photodetectors (MSM PDs) with a low-temperature (LT) AlGaN interlayer (IL) were fabricated. Compared with the conventional AlGaN/GaN MSM PD, it was found that leakage current can be suppressed by insertion of a LT AlGaN IL due to the reduction of surface pits and improvement of crystalline quality. It was also found that larger photoresponsivity can be achieved due to the enhanced electric field strength as a result of inserting a LT AlGaN IL. Furthermore, suppressed photoconductive gain, lower noise level, and larger detectivity of MSM PD can also be achieved by using a LT AlGaN IL.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; metal-semiconductor-metal structures; photodetectors; wide band gap semiconductors; AlGaN-GaN; electric field strength; leakage current; low-temperature interlayer; metal-semiconductor-metal photodetectors; photoconductive gain; photoresponsivity; Aluminum gallium nitride; Crystallization; Electrodes; Electron mobility; Fingers; Gallium nitride; Leakage current; Photodetectors; Substrates; Temperature sensors; LT AlGaN IL; MSM PDs;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2009.2021190

Filename

4912579