Title :
Broadband ESD protection circuits in CMOS technology
Author :
Galal, Sherif ; Razavi, Behzad
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA
Abstract :
A broadband technique using monolithic T-coils is applied to electrostatic discharge (ESD) structures for both input and output pads. Fabricated in 0.18-μm CMOS technology, the prototypes achieve operation at 10 Gb/s while providing a return loss of -20 dB at 10 GHz. The human-body model tolerance is 1000 V for the input structure and 800-900 V for the output structure.
Keywords :
CMOS analogue integrated circuits; capacitance; coils; electrostatic discharge; impedance matching; inductance; 10 GHz; CMOS technology; T-coil peaking; broadband amplifiers; distributed ESD structures; high-speed ESD protection; human-body model tolerance; impedance matching; inductive peaking; simulated eye diagram; Bandwidth; CMOS technology; Circuit simulation; Data communication; Electrostatic discharge; Impedance matching; Microprocessors; Parasitic capacitance; Protection; Prototypes;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2003.818568
