Title :
Linear, electronically tunable resistor
Author :
Tsividis, Yannis ; Vavelidis, Kostis
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Tech. Univ. of Athens, Greece
Abstract :
A technique for converting a MOSFET into a highly linear, electronically tunable resistor is described. The key to the linearisation achieved is the application of voltages across the gate and across the body, in such a way that the gate-channel and body-channel potentials remain constant all along the channel. Measurements show distortion levels of less than -75 dB for signal amplitudes of 6 V peak to peak.
Keywords :
MOS integrated circuits; insulated gate field effect transistors; linear integrated circuits; resistors; MIETEC process; MOSFET; body-channel potentials; distortion levels; gate channel potential; integration; linear electronically tunable resistor; linearisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921482
