DocumentCode
842601
Title
Innovative passivated heterojunction bipolar transistor grown by CBE
Author
Dubon-Chevallier, C. ; Alexandre, F. ; Benchimol, J.L. ; Dangla, J. ; Amarger, V. ; Heliot, Fabien ; Bourguiga, R.
Author_Institution
France Telecom, CNET, Bagneux, France
Volume
28
Issue
25
fYear
1992
Firstpage
2308
Lastpage
2309
Abstract
An innovative passivated heterojunction bipolar transistor structure, which enables with the same technological step both base surface passivation and emitter selective etching to be obtained, is reported. This new structure employs an emitter comprising two layers, a thin GaInP layer and a GaAlAs layer.
Keywords
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor growth; CBE growth; GaAlAs-GaInP-GaAs; GaAs substrate; base surface passivation; emitter selective etching; heterojunction bipolar transistor; passivated HBT;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921485
Filename
191843
Link To Document