Title :
Innovative passivated heterojunction bipolar transistor grown by CBE
Author :
Dubon-Chevallier, C. ; Alexandre, F. ; Benchimol, J.L. ; Dangla, J. ; Amarger, V. ; Heliot, Fabien ; Bourguiga, R.
Author_Institution :
France Telecom, CNET, Bagneux, France
Abstract :
An innovative passivated heterojunction bipolar transistor structure, which enables with the same technological step both base surface passivation and emitter selective etching to be obtained, is reported. This new structure employs an emitter comprising two layers, a thin GaInP layer and a GaAlAs layer.
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; passivation; semiconductor growth; CBE growth; GaAlAs-GaInP-GaAs; GaAs substrate; base surface passivation; emitter selective etching; heterojunction bipolar transistor; passivated HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19921485
